DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BSM35GB120DN2 Ver la hoja de datos (PDF) - eupec GmbH

Número de pieza
componentes Descripción
Fabricante
BSM35GB120DN2
EUPEC
eupec GmbH EUPEC
BSM35GB120DN2 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
BSM 35 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39
-
60
120
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39
-
60
120
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39
-
400
600
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39
-
50
75
Free-Wheel Diode
Diode forward voltage
IF = 35 A, VGE = 0 V, Tj = 25 °C
IF = 35 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
2.3
2.8
1.9
-
0.25 -
2
-
5
-
Unit
ns
V
µs
µC
3
Oct-21-1997

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]