BSM35GB120DN2 Ver la hoja de datos (PDF) - Siemens AG

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Fabricante

BSM35GB120DN2

IGBT Power Module

Siemens AG 

BSM 35 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Gate threshold voltage

VGE(th)

V

VGE = VCE, IC = 1.2 mA

4.5

5.5

6.5

Collector-emitter saturation voltage

VCE(sat)

VGE = 15 V, IC = 35 A, Tj = 25 °C

-

2.7

3.2

VGE = 15 V, IC = 35 A, Tj = 125 °C

-

3.3

3.9

Zero gate voltage collector current

ICES

mA

VCE = 1200 V, VGE = 0 V, Tj = 25 °C

-

0.6

1

VCE = 1200 V, VGE = 0 V, Tj = 125 °C

-

2.4

-

Gate-emitter leakage current

IGES

nA

VGE = 20 V, VCE = 0 V

-

-

150

AC Characteristics

Transconductance

gfs

S

VCE = 20 V, IC = 35 A

11

-

-

Input capacitance

Ciss

nF

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

2

-

Output capacitance

Coss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.3

-

Reverse transfer capacitance

Crss

VCE = 25 V, VGE = 0 V, f = 1 MHz

-

0.14 -

Semiconductor Group

2

Mar-28-1996

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