BSM 35 GB 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
-
60
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 35 A
RGon = 39 Ω
-
60
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
-
400
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 35 A
RGoff = 39 Ω
-
50
ns
120
120
600
75
Free-Wheel Diode
Diode forward voltage
IF = 35 A, VGE = 0 V, Tj = 25 °C
IF = 35 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 35 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
V
2.3
2.8
1.9
-
µs
0.25 -
µC
2
-
5
-
Semiconductor Group
3
Mar-28-1996