BAS321 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza

componentes Descripción

Fabricante

BAS321

General purpose diode

NXP Semiconductors. 

Nexperia

1.0

Cd

(pF)

0.8

0.6

0.4

mbg447

300

VR

(V)

200

100

BAS321

General purpose diode

mbk926

0.2

0

2

4

6

8

VR (V)

f = 1 MHz

Tj = 25 °C.

Fig. 5. Diode capacitance as a function of reverse

voltage; typical values.

0

0

50

100

150

200

Tamb (°C)

Fig. 6. Maximum permissible continuous reverse

voltage as a function of the ambient

temperature

11. Test information

tr

tp

RS = 50 Ω

D.U.T.

IF

SAMPLING

OSCILLOSCOPE

10 %

V = VR + IF × RS

Ri = 50 Ω

(1) IR = 3 mA

VR

90 %

mga881

input signal

Fig. 7. Reverse recovery time test circuit and waveforms

t

+ IF

trr

t

(1)

output signal

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

BAS321

Product data sheet

All information provided in this document is subject to legal disclaimers.

18 June 2019

© Nexperia B.V. 2019. All rights reserved

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