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SFH636

High Speed 5.3 kV Optocoupler

Infineon Technologies 

SFH636

High Speed 5.3 kV Optocoupler

FEATURES

• High Speed Optocoupler without Base

Connection

• GaAlAs Emitter

• Integrated Detector with Photodiode and

Transistor

• High Data Transmission Rate: 1.0 MBit/s

• TTL Compatible

• Open Collector Output

• CTR at IF=16 mA, VO=0.4 V, VCC=4.5 V,

TA=25°C: ≥19%

• Good CTR Linearity Relative to Forward Current

• Field Effect Stable by TRIOS

(TRansparent IOn Shield)

• Low Coupling Capacitance

• dV/dt: typ. 10 kV/µs

• Isolation Test Voltage: 5300 VRMS

• UL Approval, File #E52744

•

V

DE

VDE #0884, Available with Option 1

APPLICATIONS

• IGBT Drivers

• Data Communications

• Programmable Controllers

DESCRIPTION

The SFH636 is an optocoupler with a GaAlAs infrared

emitting diode, optically coupled to an integrated pho-

todetector consisting of a photodiode and a high

speed transistor in a DIP-6 plastic package. The

device is functionally similar to 6N136 except there is

no base connection, and the electrical foot print is dif-

ferent. Noise and dv/dt performance is enhanced by

not bringing out the base connection.

Signals can be transmitted between two electrically

separated circuits up to frequencies of 2.0 MHz. The

potential difference between the circuits to be coupled

should not exceed the maximum permissible refer-

ence voltages.

Dimensions in Inches (mm)

321

pin one ID

.248 (6.30)

.256 (6.50)

.039

(1.00)

Min.

4°

typ.

.018 (0.45)

.022 (0.55)

Cathode 1

4 56

.335 (8.50)

.343 (8.70)

Anode 2

NC 3

.048 (0.45)

.022 (0.55)

.130 (3.30)

.150 (3.81)

.031 (0.80) min. 3°–9°

.031 (0.80)

.035 (0.90)

.100 (2.54) typ.

6 VCC

5 Emitter

4 Collector

.300 (7.62)

typ.

18°

.010 (.25)

typ.

.300–.347

(7.62–8.81)

.114 (2.90)

.130 (3.0)

Absolute Maximum Ratings

Emitter (GaAlAs)

Reverse Voltage................................................................................ 3.0 V

DC Forward Current........................................................................ 25 mA

Surge Forward Current ..................................................................... 1.0 A

tp≤1.0 µs, 300 pulses/s

Total Power Dissipation.................................................................. 45 mW

Detector (Si Photodiode + Transistor)

Supply Voltage....................................................................... –0.5 to 30 V

Output Voltage....................................................................... –0.5 to 20 V

Output Current ............................................................................... 8.0 mA

Total Power Dissipation................................................................ 100 mW

Package Insulation

Isolation Test Voltage

between emitter and detector

(refer to climate DIN 40046, part 2, Nov. 74) ......................5300 VRMS

Creepage.................................................................................... ≥7.0 mm

Clearance ................................................................................... ≥7.0 mm

Isolation Resistance

VIO=500 V, TA=25°C................................................................. ≥1012 Ω

VIO=500 V, TA=100°C............................................................... ≥1011 Ω

Storage Temperature Range ............................................. –55 to +150°C

Ambient Temperature Range............................................. –55 to +100°C

Junction Temperature ..................................................................... 100°C

Soldering Temperature (t=10 s max.)

Dip soldering: distance to seating plane ≥1.5 mm ..................... 260°C

 2000 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA

www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)

OSRAM Opto Semiconductors GmbH & Co. OHG • Regensburg, Germany

www.osram-os.com • +49-941-202-7178

1

February 24, 2000-22

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