BLW81 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

BLW81

UHF power transisto

New Jersey Semiconductor 

CHARACTERISTICS

TJ = 25 "C

Breakdown voltages

Collector-emitter voltage

VBE = 0; lc = 25 mA

Collector-emitter voltage

open base; lc = 100 mA

Emitter-base voltage

open collector; IE = 10 mA

Collector cut-off current

VBE = 0; V C E = 1 7 V

D.C. current gain d)

lc=1,25A;VCE = 5V

Collector-emitter saturation voltage ir>

IC = 3,75A; IB = 0,75 A

Transition frequency at f = 500 MHz <1>

lc = 1,25 A; VCE = 12,5V

lc = 3,75 A; VCE = 12,5V

Collector capacitance at f = 1 MHz

lE = le = 0; VCB= 12,5V

Feedback capacitance at f = 1 MHz

lc = 100 mA;VCE= 12,5V

Collector-stud capacitance

Note

1. Measured under pulse conditions: tp < 200 us; 8 < 0,02.

V(BR)CES

V(BR)CEO

V(BR)EBO

ICES

VCE

fr

fr

36 V

17 V

4V

10 mA

>

10

typ

35

typ

0,75 V

typ

1,3 GHz

typ

0,9 GHz

typ

34 pF

typ

18 pF

typ

1,2 pF

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