BLW81 Ver la hoja de datos (PDF) - New Jersey Semiconductor

Número de pieza

componentes Descripción

Fabricante

BLW81

UHF power transisto

New Jersey Semiconductor 

RATINGS

Limiting values in accordance with the Absolute Maximum System (IEC 134)

Collector-emitter voltage (VBE = 0)

peak value

Collector-emitter voltage (open base)

VCESM

VCEO

Emitter-base voltage (open collector)

VEBO

Collector current (d.c. or average)

Ic

Collector current (peak value); f> 1 MHz

ICM

R.F. power dissipation (f > 1 MHz); Tmb = 25 °C

Ptot

Storage temperature

Tstg

Operating junction temperature

T,

max

36 V

max

17 V

max

4V

max 2,5 A

max

7,5 A

max

40 W

-65 to+150 JC

max 200 "C

r f power dissipation

VCE< 16.5V

f>1 MHz

Fig.2

THERMAL RESISTANCE

From junction to mounting base

From mounting base to heatsink

Fig. 3

Rthj-mb

Rth mb-h

4,3 K/W

0,6 K/W

Share Link: