BLF368 Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza

componentes Descripción

Fabricante

BLF368

VHF push-pull power MOS transistor

Philips Electronics 

Philips Semiconductors

VHF push-pull power MOS transistor

Product specification

BLF368

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.15 K/W unless otherwise specified. RF performance in CW operation in a common source

class-AB circuit. RGS = 536 Ω per section; optimum load impedance per section = 1.34 + j0.34 Ω; VDS = 32 V.

MODE OF OPERATION

f

(MHz)

VDS

(V)

IDQ

(mA)

PL

(W)

Gp

(dB)

∆Gp

(dB)

(note 1)

ηD

(%)

CW, class-AB

225

32

2 × 250 300

>12

>1

>55

typ. 13.5

typ. 0.4

typ. 62

225

28

2 × 250 300

typ. 13

typ. 0.7

typ. 68

225

35

2 × 250 300

typ. 14

typ. 0.2

typ. 60

175

28

2 × 250 300

typ. 15

typ. 0.5

typ. 70

Note

1. Assuming a 3rd order amplitude transfer characteristic, 1 dB compression corresponds with 30% synchronized

input/25% synchronized output compression in television service (negative modulation, CCIR system).

Ruggedness in class-AB operation

The BLF368 is capable of withstanding a load mismatch corresponding to VSWR = 10 through all phases under the

following conditions:

VDS = 32 V; f = 225 MHz at rated output power.

1998 Jul 29

6

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