BLF368 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLF368 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF368
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RDSon
(mΩ)
150
MGP231
100
50
0
50
VGS = 10 V; ID = 8 A.
100
150
Tj (°C)
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values per section.
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C
(pF)
1000
MGP234
500
Cis
Cos
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values per
section.
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Crs
(pF)
400
MGP232
200
0
0
10
20
30
40
VDS (V)
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values per
section.
1998 Jul 29
5
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