BLF368 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLF368 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF368
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per transistor section
V(BR)DSS
IDSS
IGSS
VGSth
∆VGS
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
both transistor sections
gfs
gfs1/gfs2
forward transconductance
forward transconductance ratio
of both transistor sections
RDSon
IDSX
Cis
Cos
Crs
Cd-f
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
VGS = 0; ID = 100 mA
VGS = 0; VDS = 32 V
VGS = ±20 V; VDS = 0
ID = 100 mA; VDS = 10 V
ID = 100 mA; VDS = 10 V
ID = 8 A; VDS = 10 V
ID = 8 A; VDS = 10 V
ID = 8 A; VDS = 10 V
VGS = 10 V; VDS = 10 V
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
VGS = 0; VDS = 32 V; f = 1 MHz
MIN. TYP. MAX. UNIT
65
−
−
−
−
−
2
−
−
−
−
V
5
mA
1
µA
4.5 V
100 mV
5
7.5 −
S
0.9 −
1.1
−
0.1 0.15 Ω
−
37
−
A
−
495 −
pF
−
340 −
pF
−
40
−
pF
−
5.4 −
pF
handbook, h0alfpage
T.C.
(mV/K)
−1
MGP229
−2
−3
−4
−5
10−1
VDS = 10 V.
1
10
ID (A)
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current; typical
values per section.
handbook,6h0alfpage
ID
(A)
40
MGP230
20
0
0
5
10
15
20
VGS (V)
VDS = 10 V; Tj = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage; typical values per section.
1998 Jul 29
4
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