BLF368 Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
BLF368 Datasheet PDF : 16 Pages
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Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF368
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per transistor section unless otherwise specified
VDSS
VGSS
ID
Ptot
Tstg
Tj
drain-source voltage
−
65
V
gate-source voltage
−
±20 V
drain current (DC)
−
25
A
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
500 W
storage temperature
−65 150 °C
junction temperature
−
200 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
Rth mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
VALUE
0.35
0.15
UNIT
K/W
K/W
handbook1, h0a2lfpage
ID
(A)
(1)
10
MRA933
(2)
1
1
10
102
VDS (V)
(1) Current in this area may be limited by RDSon.
(2) Tmb = 25 °C.
Total device; both sections equally loaded.
Fig.2 DC SOAR.
handbook5, 0h0alfpage
Ptot
(W)
400
(2)
(1)
300
200
MGE616
100
0
0
40
80
120
160
Th (°C)
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
Fig.3 Power/temperature derating curves.
1998 Jul 29
3
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