Philips Semiconductors
VHF push-pull power MOS transistor
Product specification
BLF378
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per transistor section unless otherwise specified
VDSS
VGSS
ID
Ptot
Tstg
Tj
drain-source voltage
−
110 V
gate-source voltage
−
±20 V
drain current (DC)
−
18
A
total power dissipation Tmb ≤ 25 °C total device; both sections equally loaded −
500 W
storage temperature
−65 150 °C
junction temperature
−
200 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
thermal resistance from junction to mounting base total device; both sections
equally loaded
Rth mb-h
thermal resistance from mounting base to heatsink total device; both sections
equally loaded
VALUE
0.35
0.15
UNIT
K/W
K/W
100
handbook, halfpage
ID
(A)
(1)
10
MRA988
(2)
1
1
10
100
500
VDS (V)
Total device; both sections equally loaded.
(1) Current is this area may be limited by RDSon.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
handbook5, 0h0alfpage
Ptot
(W)
400
(2)
(1)
300
200
MGE616
100
0
0
40
80
120
160
Th (°C)
Total device; both sections equally loaded.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Fig.3 Power derating curves.
1998 Jul 29
3