Philips Semiconductors
UHF power transistor
Product specification
BLU30/12
handbook,5h0alfpage
PL
(W)
40
30
20
10
0
0
4
MDA330
Th = 25 °C
70 °C
8
12
16
20
PS (W)
VCE = 12,5 V; f = 470 MHz; class-B operation;
Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values.
Fig.9 Load power vs. source power.
handbook,1h0alfpage
Gp
(dB)
8
Gp
6
MDA331
150
ηC
(%)
125
100
4
75
2
50
ηC
0
25
0
10
20
30
40
50
PL (W)
Th = 25 °C;
− − − Th = 70 °C.
VCE = 12,5 V; f = 470 MHz; class-B operation;
Th = 25 °C and 70 °C; Rth mb-h = 0,2 K/W; typical values.
Fig.10 Power and gain and efficiency vs. load power.
RUGGEDNESS
The device is capable of withstanding a full load mismatch
(VSWR = 50; all phases) up to 38 W under the following
conditions:
VCE = 15,5 V; f = 470 MHz; Th = 25 °C; Rth mb-h = 0,2 K/W.
January 1985
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