NXP Semiconductors
900 MHz high linear low noise amplifier
Product specification
BGA2011
30
handbook, halfpage
gain
(dB)
20
10
Gmax
s21 2
MLD481
0
0
1000
2000
3000
f (MHz)
IC = 15 mA; VS = VC = 3 V; PD = 30 dBm; Zo = 50
Fig.3 Insertion gain (s212) and Gmax as
functions of frequency; typical values.
20
handbook, halfpage
gain
(dB)
15
10
5
0
0
s2I1S2
MLD482
20
IS
(mA)
15
10
IS
5
0
1
2
3
VC (V)
f = 900 MHz; VS = 3 V; PD = 30 dBm.
Fig.4 Insertion gain and supply current as
functions of control voltage; typical values.
20
handbook, halfpage
s21 2
(dB)
15
10
5
MLD483
15
handbook, halfpage
IP3out
(dBm)
10
IP3in
5
IP3out
MLD484
0
IP3in
(dBm)
−5
−10
0
10−3
10−2
IC (mA)
10−1
f = 900 MHz; VS = 4 V; PD = 30 dBm.
Fig.5 Insertion gain as a function of control
current; typical values.
2000 Dec 04
0
−15
5
10
15
IS (mA)
VS = VC = 3 V; PD = 30 dBm (both tones); f = 900 MHz; f = 100 kHz.
Fig.6 Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
5