BGA2011 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BGA2011 Datasheet PDF : 12 Pages
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NXP Semiconductors
900 MHz high linear low noise amplifier
Product specification
BGA2011
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction
to solder point
CONDITIONS
Ptot = 135 mW; Ts 100 C
VALUE
350
UNIT
K/W
CHARACTERISTICS
RF input AC coupled; VS = 3 V; IS = 15 mA; f = 900 MHz; Tj = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP.
IS
IC
RL IN
RL OUT
|s21|2
NF
IP3in
supply current
10
15
control current
0.11
return losses input
typical application; see Fig.2
11
high IP3 (see Fig.2; stripline = 0 mm)
11
high IP3 (see Fig.2; stripline = 1.5 mm)
17
return losses output typical application; see Fig.2
11
high IP3 (see Fig.2; stripline = 0 mm)
12
high IP3 (see Fig.2; stripline = 1.5 mm)
14
insertion power gain typical application; see Fig.2
15
high IP3 (see Fig.2; stripline = 0 mm)
19
high IP3 (see Fig.2; stripline = 1.5 mm)
16
noise figure
typical application; see Fig.2;
1.5
IS = 15 mA
high IP3 (see Fig.2; stripline = 0 mm)
1.6
high IP3 (see Fig.2; stripline = 1.5 mm)
1.7
input intercept point typical application; see Fig.2
2
high IP3 (see Fig.2; stripline = 0 mm)
4
high IP3 (see Fig.2; stripline = 1.5 mm)
10
MAX.
20
UNIT
mA
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
2000 Dec 04
3
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