BD707 Ver la hoja de datos (PDF) - Inchange Semiconductor
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BD707 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BD707 BD709 BD711
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
BD707
BD709 IC=0.1A, IB=0
BD711
VCEsat Collector-emitter saturation voltage IC=4A ,IB=0.4A
VBE
Base-emitter voltage
IC=4A , VCE=4V
BD707
VCB=60V, IE=0
TC=150℃
ICBO
Collector cut-off current
BD709
VCB=80V, IE=0
TC=150℃
BD711
VCB=100V, IE=0
TC=150℃
BD707 VCE=30V, IB=0
ICEO
Collector cut-off current BD709 VCE=40V, IB=0
BD711 VCE=50V, IB=0
IEBO
hFE-1
hFE-2
hFE-3
Emitter cut-off current
VEB=5V; IC=0
DC current gain
IC=0.5A ; VCE=2V
DC current gain only for BD707/709 IC=2A ; VCE=2V
DC current gain
IC=4A ; VCE=2V
BD707
hFE-4
DC current gain
BD709 IC=10A ; VCE=4V
BD711
fT
Transition frequency
IC=0.3A;VCE=3V;
MIN TYP. MAX UNIT
60
80
V
100
1.0
V
1.5
V
0.1
1.0
0.1
1.0
mA
0.1
1.0
0.1
mA
1.0
mA
40
120
400
30
15
150
5
10
8
8
3
MHz
2
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