BDW51C Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BDW51C Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25*C unless otherwise specified
SYMBOL
PARAMETER
BDW51
CONDITIONS
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BDW51A
BDW51B '
BDW51C
VcE(sat)-1 Collector-Emitter Saturation Voltage |c= 5A; |B= 0.5A
VcE(sat)-2 Collector-Emitter Saturation Voltage IC=10A;IB=2.5A
VeE(sat) Base-Emitter Saturation Voltage
|C=10A;IB=2.5A
VeE(on)
IOBO
Base-Emitter On Voltage
BDW51
Collector
Cutoff Current
BDW51A
BDW51B
BDW51C
BDW51
lc= 5A; VCE= 4V
VCB= 45V; IE= 0
VcB=45V;lE=0;Tc=15CrC
VCB= 60V; IE= 0
VCB=60V;lE=0;Tc=150-C
VCB= 80V; IE= 0
VCB=80V;lE=0;Tc=150-C
VCB=100V;lE=0
VCB=100V;lE=0;Tc=150°C
VCE= 22V; IB= 0
Collector
ICEO
Cutoff Current
BDW51A
BDW51B
VCE= 30V; IB= 0
VCE= 40V; IB= 0
BDW51C VCE= 50V; IB= 0
IEBO
hpE-1
Emitter Cutoff Current
DC Current Gain
VEB= 5V; lc=0
lc= 5A; VCE= 4V
hFE-2
DC Current Gain
lc=10A;VCE=4V
fi
Current Gain-Bandwidth Product
lc= 0.5A; VCE= 4V
BDW51/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
1.0
V
3.0
V
2.5
V
1.5
V
0.5
5.0
0.5
5.0
mA
0.5
5.0
0.5
5.0
1.0
mA
2.0
mA
20
150
5
3
MHz
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