BD637 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BD637 Datasheet PDF : 2 Pages
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^/£ii£U ^e.mi-Conducto'i ^Product*., One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD637
DESCRIPTION
• DC Current Gain -
;.
: hFE = 40(Min.)@ lc= 25mA
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min.)
• Complement to Type BD638
(P
'i
1i
,:i
i 23
i
PIN l.BASE
2. COLLECTOR
3. WITTER
TO-220C package
APPLICATIONS
• Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25t:)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
2
A
IOM
Collector Current-Peak
5
A
IB
Base Current-Continuous
Collector Power Dissipation
@ T -25°c
PC
Collector Power Dissipation'
@ TC-25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
0.3
A
2
W
30
150
"C
-55-150 •c
- BH
-»
-« V H L-F
l!
A
f
T
K
rJ_ M.DO'-
i
50&- •
f
T
j^r»4*« D
H G h-
<m
*i j
mm
OIM MIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
,| 0.44 0.46
K 13.20 13.40
L 1.10 1.30
U 2.70
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
U 8.66 8.86
N.I SciiihCniiductors reserves the right to change tost conditions, parameter limits and package dimensions \vithout
notice. Inrbimatit'ii tiirni.shed hy N.I Soini-(.'oiuluctors is helie\cd to he hinh accurate and reliable at the lime of iioin
in pros-;. I Inuexcr, N.I Senii-(.'oiidiicfors assumes no responsibility for an> errors or omissions discovered in its u.se.
XI Scmi-('4Midiiclors encoiiraues tuslomcrs to \erily dial datasheets are cunvnl before placing orders.
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