BDX83C Ver la hoja de datos (PDF) - New Jersey Semiconductor
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BDX83C Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDX83/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BDX83
45
BDX83A
60
Collector-Emitter
VcEO(SUS) Sustaining Voltage
lc= 100mA; IB=0
V
BDX83B
80
BDX83C
100
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 10mA
VBE(OH)-I Base-Emitter On Voltage
lc= 5A; VCE= 3V
VBE(on)-2
ICEV
Base-Emitter On Voltage
BDX83
Collector
Cutoff Current
BDX83A
BDX83B
BDX83C
BDX83
lc=10A;VCE=3V
VCE= 45V; VBE= -1.5V
VCE= 45V; VBE= -1 .5V; Tc= 1 50'C
VCE= 60V; VBE= -1.5V
VCE= 60V; VBE= -1.5V; Tc= 150'C
VCE= 80V; VBE= -1.5V
VCE= 80V; VBE= -1 .5V; Tc= 1 50 "C
VCE= 100V;VaE=-1.5V
VCE= 100V; VBE= -1.5V; Tc= 150'C
VCE= 20V; IB=0
2.0
V
2.8
V
4.5
V
0.5
3.0
r~0.5
3.0
mA
0.5
3.0
0.5
3.0
Collector
ICEO
Cutoff Current
BDX83A VCE= 30V; IB=0
BDX83B VCE= 40V; IB=0
1.0 mA
BDX83C VCE= 50V; |B=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc=0
5.0 mA
HFE--I
DC Current Gain
lc= 1A; VCE= 3V
750
HpE-2
DC Current Gain
lc= 5A; VCE= 3V
1000
hFE-3
DC Current Gain
lc=10A;VCE=3V
250
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