BYW82-TR Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
BYW82-TR Datasheet PDF : 5 Pages
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www.vishay.com
BYW82, BYW83, BYW84, BYW85, BYW86
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
DESIGN SUPPORT TOOLS
949588
click logo to get started
Models
Available
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
BYW82 or BYW83 or BYW84 and BYW86
BYW86-TR
BYW82 or BYW84 and BYW85
BYW85-TAP
BYW85
BYW85TR
BYW83 or BYW86
BYW86TAP
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLCIATIONS
• Rectification, general purpose
TAPED UNITS
2500 per 10" tape and reel
2500 per ammopack
2500 per 10" tape and reel
2500 per ammopack
MINIMUM ORDER QUANTITY
12 500
12 500
12 500
12 500
PARTS TABLE
PART
BYW82
BYW83
BYW84
BYW85
BYW86
TYPE DIFFERENTIATION
VR = 200 V, IF(AV) = 3 A
VR = 400 V, IF(AV) = 3 A
VR = 600 V, IF(AV) = 3 A
VR = 800 V, IF(AV) = 3 A
VR = 1000 V, IF(AV) = 3 A
PACKAGE
SOD-64
SOD-64
SOD-64
SOD-64
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
BYW82
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW83
BYW84
BYW85
BYW86
Peak forward surge current
Repetitive peak forward current
tp = 10 ms, half sine wave
Average forward current
Pulse avalanche peak power
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
tp = 20 μs, half sine wave, Tj = 175 °C
I(BR)R = 1 A, Tj = 175 °C
i2t-rating
Junction and storage temperature range
SYMBOL
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IFRM
IF(AV)
PR
VALUE
200
400
600
800
1000
100
18
3
1000
ER
20
i2t
Tj = Tstg
40
-55 to +175
UNIT
V
V
V
V
V
A
A
A
W
mJ
A2s
°C
Rev. 2.0, 22-Feb-18
1
Document Number: 86051
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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