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BYW82(1998) Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza
componentes Descripción
Fabricante
BYW82
(Rev.:1998)
Vishay
Vishay Semiconductors Vishay
BYW82 Datasheet PDF : 4 Pages
1 2 3 4
BYW82...BYW86
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
Test Conditions
IF=3A
VR=VRRM
VR=VRRM, Tj=100°C
IR=100mA, tp/T=0.01, tp=0.3ms
VR=0, f=0.47MHz
IF=0.5A, IR=1A, iR=0.25A
IF=1A, di/dt=5A/ms, VR=50V
IF=1A, di/dt=5A/ms
Type Symbol Min
VF
IR
IR
V(BR)
CD
trr
trr
Qrr
Typ Max Unit
1.0 V
0.1 1 mA
5 10 mA
1600 V
65 100 pF
2 4 ms
3 6 ms
6 10 mC
Characteristics (Tj = 25_C unless otherwise specified)
40
4
30
3
20
l
l
10
0
TL=constant
0 5 10 15 20 25 30
94 9563
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
2.0
VR = VR RM
f=1kHz
1.6
RthJA=70K/W
PCB
1.2
0.8
0.4
0
0
40
80
120 160 200
94 9565
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
2
VR = VR RM
f=1kHz
RthJA=25K/W
1
L=10mm
0
0
40
80
120 160 200
94 9564
Tamb – Ambient Temperature ( °C )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
1000
Scattering Limit
100
10
1
VR = VR RM
0.1
0
40
80
120 160 200
94 9566
Tj – Junction Temperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 86051
Rev. 2, 24-Jun-98

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