BC846AW Ver la hoja de datos (PDF) - TY Semiconductor

Número de pieza

componentes Descripción

Fabricante

BC846AW

NPN General Purpose Transistor

TY Semiconductor 

SMD Type

TransistIoCrs

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

BC846W

DC current gain

BC847W,BC848W

BC846AW,BC847AW

BC846BW,BC847BW

BC847CW

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

Collector capacitance

Transition frequency

Noise figure

* Pulse test: tp 300µs, ä 0.02.

Product specification

BC846W,BC847W,BC848W

Symbol

Testconditons

Min Typ Max Unit

ICBO VCB = 30 V; IE = 0

15 nA

ICBO VCB = 30 V; IE = 0;Tj = 150

5 ìA

IEBO VEB = 5 V; IC = 0

100 nA

110

450

110

800

hFE IC = 2 mA; VCE = 5 V

110 180 220

200 290 450

420 520 800

IC = 10 mA; IB = 0.5 mA

VCE(sat)

IC = 100 mA; IB = 5 mA; *

90 250 mV

200 600 mV

IC = 10 mA; IB = 0.5 mA

VBE(sat)

IC = 100 mA; IB = 5 mA;*

700

mV

900

mV

IC = 2 mA; VCE = 5 V

VBE

IC = 10 mA; VCE = 5 V

580 660 700 mV

770 mV

CC VCB = 10 V; IE = Ie = 0;f = 1 MHz

3 pF

fT

VCE = 5 V; IC = 10 mA;f = 100 MHz

100

MHz

NF

IC = 200 ìA; VCE = 5 V;RS = 2 kÙ; f =

1 kHz;B = 200 Hz

10 dB

hFE Classification

TYPE

Marking

BC846W

1D

TYPE

Marking

BC847W

1H

TYPE

Marking

BC848W

1M

BC846AW

1A

BC846BW

1B

BC847AW

1E

BC847BW

1F

BC847CW

1G

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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