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F1S4N100 Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza
componentes Descripción
Fabricante
F1S4N100 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
RFP4N100, RF1S4N100SM
Typical Performance Curves TC = 25oC, Unless Otherwise Specified (Continued)
16
ID = 3.9A
12
8
VDS = 100V
VDS = 200V
VDS = 400V
4
0
0
20
40
60
80
Qg, TOTAL GATE CHARGE (nC)
FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Test Circuits and Waveforms
VDS
L
VARY tP TO OBTAIN
REQUIRED PEAK IAS
RG
VGS
DUT
+
VDD
-
tP
0V
IAS
0
0.01
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
RL
+
RG
VDD
-
DUT
VGS
FIGURE 16. SWITCHING TIME TEST CIRCUIT
©2002 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
RFP4N100, RF1S4N100SM Rev. B

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