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ACS108-6SA-AP Ver la hoja de datos (PDF) - STMicroelectronics

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ACS108-6SA-AP Datasheet PDF : 13 Pages
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ACS108-6SA
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1. Maximum power dissipation versus rms on-state
current
Figure 2. On-state rms current versus ambient
temperature
0.9 P (W)
α = 180°
0.8
0.7
0.6
0.5
0.4
0.3
0.2
180°
0.1
IT(RMS) ( A)
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS) (A)
0.9
0.8
0.7 TO-92
0.6
0.5
0.4
0.3
0.2
Single layer Printed
0.1
circuit board FR4
Natural convection
0.0
0
25
50
α =180 °
Ta °C
75
100
125
Figure 3. Relative variation of thermal impedance junction
to ambient versus pulse duration
Figure 4. Relative variation of holding and latching
current versus junction temperature
K=[Zth(j-a)/Rth(j-a)]
1.00
Zth(j -a)
0.10
TO-92
0.01
1.0E-03
1.0E-02
1.0E-01
tP (s)
1.0E+00 1.0E+01 1.0E+02 1.0E+03
3.0 IH, IL [T j] / IH, IL [T j=25 ° C]
2.5
IL
2.0
1.5
IH
1.0
0.5
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
DS1641 - Rev 6
page 4/13

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