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ACS1086SA Ver la hoja de datos (PDF) - STMicroelectronics

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ACS1086SA Datasheet PDF : 13 Pages
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ACS108-6SA
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (Tamb = 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
IT(RMS) On-state rms current (full sine wave), S = 5cm²
Tamb = 64 °C
Tlead = 76 °C
0.45
A
0.8
ITSM
Non repetitive surge peak on-state current
Tj initial = 25 °C, (full cycle sine wave)
tp = 20 ms
tp = 16.7 ms
13
A
13.7
I2t
I2t for fuse selection
tp = 10 ms
1.1
A2s
dI/dt Critical rate of rise on-state current IG = 2 x IGT, tr ≤ 100 ns
f = 120 Hz, Tj = 125 °C
100
A/μs
VPP(1) Non repetitive line peak pulse voltage
2
kV
PG(AV) Average gate power dissipation
Tj = 125 °C
0.1
W
VGM Peak positive gate voltage
Tj = 125 °C
10
V
IGM Peak gate current (tp = 20 μs)
Tj = 125 °C
1
A
Tstg Storage temperature range
-40 to +150 °C
Tj
Operating junction temperature range
-30 to +125 °C
1. according to test described by standard IEC 61000-4-5, see Figure 15. Overvoltage ruggedness test circuit for resistive and
inductive loads, Tamb = 25 °C (conditions equivalent to IEC 61000-4-5 standard) for conditions
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
IGT (1)
VGT
VOUT = 12 V, RL = 33 Ω
VGD
VOUT = VDRM, RL = 3.3 kΩ, Tj = 125 °C
IH
IOUT = 100 mA
IL
IG = 1.2 x IGT
dV/dt VOUT = 402 V, gate open, Tj = 125 °C
(dI/dt)c Without snubber (15 V/μs), Tj = 125 °C, turn-off time ≤20 ms
VCL
ICL = 0.1 mA, tp = 1 ms
1. Minimum IGT is guaranteed at 10% of IGT max.
Quadrant
II - III
II - III
Value
Max.
10
Max. 1.0
Min. 0.15
Max.
10
Max.
25
Min. 2000
Min.
2
Min. 650
Unit
mA
V
V
mA
mA
V/μs
A/ms
V
Table 3. Static electrical characteristics
Symbol
VTM (1)
VT0(1)
Rd(1)
IDRM
IRRM
ITM = 1.1 A, tp = 500 μs
Threshold voltage
Dynamic resistance
VOUT = VDRM/ VRRM
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Value
Unit
Max.
1.3
V
Max.
0.85
V
Max.
300
mΩ
2
µA
Max.
0.2
mA
DS1641 - Rev 6
page 2/13

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