HYM368025GS-50 Ver la hoja de datos (PDF) - Infineon Technologies

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HYM368025GS-50

8M x 36-Bit EDO - DRAM Module

Infineon Technologies 

8M x 36-Bit EDO - DRAM Module

HYM 368025S/GS-50/-60

• SIMM modules with 8 388 608 words by 36-bit organization in two banks

for PC main memory applications

• Fast access and cycle time

50 ns access time

84 ns cycle time (-50 version)

60 ns access time

104 ns cycle time (-60 version)

• Hyper Page Mode (EDO) capability

20 ns cycle time (-50 version)

25 ns cycle time (-60 version)

• Single + 5 V (± 10 %) supply

• Low power dissipation

max. 6820 mW active (-50 version)

max. 6160 mW active (-60 version)

CMOS – 132 mW standby

TTL –264 mW standby

• CAS-before-RAS refresh

RAS-only-refresh

Hidden-refresh

• Decoupling capacitors mounted on substrate

• All inputs, outputs and clocks fully TTL compatible

• 72 pin Single in-Line Memory Module (L-SIM-72-14) with 31.75 mm height

• Utilizes sixteen 4Mx4-EDO-DRAMs and eight 4M x 1 EDO-DRAMs

in 300 mil wide SOJ packages

• 2048 refresh cycles / 32 ms

• Optimized for use in byte-write parity applications

• Tin-Lead contact pads (S- version)

• Gold contact pads (GS - version)

Semiconductor Group

1

4.97

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