TSSF4500(1999) Ver la hoja de datos (PDF) - Vishay Semiconductors

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TSSF4500
(Rev.:1999)

High Speed Infrared Emitting Diode in Side View Package

Vishay Semiconductors 

TSSF4500

Vishay Telefunken

High Speed Infrared Emitting Diode in Side View

Package

Description

TSSF4500 is a high speed infrared emitting diode in

GaAlAs on GaAlAs double hetero (DH) technology,

molded in a clear, untinted plastic package with spheri-

cal side view lens.

The new technology combines the high speed of DH–

GaAlAs with the efficiency of standard GaAlAs and the

low forward voltage of the standard GaAs technology.

Features

D High modulation bandwidth (10 MHz)

D Extra high radiant power and high radiant inten-

94 8688

sity

D Low forward voltage

D Suitable for high pulse current operation

D Angle of half intensity ϕ = ± 22°

D Peak wavelength lp = 870 nm

D High reliability

D Good spectral matching to Si photodetectors

Applications

Infrared high speed remote control and free air data transmission systems with high modulation frequencies or

high data transmission rate requirements.

TSSF4500 is ideal for the design of transmission systems according to IrDA requirements and for carrier fre-

quency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).

Absolute Maximum Ratings

Tamb = 25_C

Parameter

Test Conditions

Symbol

Value

Unit

Reverse Voltage

Forward Current

Peak Forward Current

Surge Forward Current

Power Dissipation

Junction Temperature

Operating Temperature Range

Storage Temperature Range

Soldering Temperature

Thermal Resistance Junction/Ambient

tp/T = 0.5, tp = 100 ms

tp = 100 ms

xt 5sec, 2 mm from case

VR

IF

IFM

IFSM

PV

Tj

Tamb

Tstg

Tsd

RthJA

5

V

100

mA

200

mA

1.5

A

170

mW

100

°C

–40...+100 °C

–40...+100 °C

260

°C

450

K/W

Document Number 81040

Rev. 3, 20-May-99

www.vishay.de • FaxBack +1-408-970-5600

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