BST50 Ver la hoja de datos (PDF) - NXP Semiconductors.
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BST50 Datasheet PDF : 9 Pages
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NXP Semiconductors
NPN Darlington transistors
Product data sheet
BST50; BST51; BST52
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
ICES
IEBO
hFE
VCEsat
VBEsat
fT
collector-emitter cut-off current
BST50
BST51
BST52
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
transition frequency
VBE = 0 V; VCE = 45 V
VBE = 0 V; VCE = 60 V
VBE = 0 V; VCE = 80 V
IC = 0 A; VEB = 4 V
VCE = 10 V; note 1; (see Fig.2)
IC = 150 mA
IC = 500 mA
IC = 500 mA; IB = 0.5 mA
IC = 500 mA; IB = 0.5 mA;
Tj = 150 °C
IC = 500 mA; IB = 0.5 mA
IC = 500 mA; VCE = 5 V;
f = 100 MHz
Switching times (between 10% and 90% levels); (see Fig.3)
ton
turn-on time
toff
turn-off time
ICon = 500 mA; IBon = 0.5 mA;
IBoff = −0.5 mA
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
MIN. TYP. MAX. UNIT
−
−
50
nA
−
−
50
nA
−
−
50
nA
−
−
50
nA
1000 −
−
2000 −
−
−
−
1.3
−
−
1.3
−
−
1.9
−
200 −
V
V
V
MHz
−
400 −
ns
−
1500 −
ns
2004 Dec 09
4
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