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RB521S-40 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd

Número de pieza
componentes Descripción
Fabricante
RB521S-40
HDSEMI
Jiangsu High diode Semiconductor Co., Ltd HDSEMI
RB521S-40 Datasheet PDF : 4 Pages
1 2 3 4
RB521S-40
SOD523 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
Small surface mounting type
Low reverse current and low forward voltage
High reliability
Applications
Rectifier
Marking
S
SOD523
Parameter
DC reverse voltage
Mean rectifying current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Symbol
VR
IO
IFSM
PD
RθJA
TJ
TSTG
Value
40
0.2
1
0.15
667
125
-55 ~ +150
Unit
V
A
A
W
/W
Electrical CharacteristicsTa=25Unless otherwise specified
Parameter
Symbol
Test Condition
Min Type Max Unit
Reverse voltage
VBR
IR =100uA
40
V
IF =10mA
0.30
V
Forward voltage
VF
IF =100mA
0.45
V
IF =200mA
0.50
V
Reverse current
VR =10V
IR
VR =40V
20
µA
90
µA
High Diode Semiconductor
1

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