HVB14S Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HVB14S

Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator

Renesas Electronics 

HVB14S

Absolute Maximum Ratings *1

Item

Symbol

Value

Reverse voltage

VR

50

Forward current

IF

50

Power dissipation

Pd

100

Junction temperature

Tj

125

Storage temperature

Tstg

−55 to +125

Note: 1. Absolute maximum ratings are described each unit separately.

(Ta = 25°C)

Unit

V

mA

mW

°C

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Forward resistance

rf

ESD-Capability *1

—

—

—

100

—

—

1.0

—

0.25

—

—

—

7

200

—

—

nA VR = 50 V

V

IF = 50 mA

pF VR = 50 V, f = 1 MHz

Ω

IF = 10 mA, f = 100 MHz

V C = 200 pF, R = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes: 1. Per one device.

2. Failure criterion; IR ≥ 200 nA at VR = 50 V

Rev.2.00 Dec 15, 2004 page 2 of 4

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