HUF75831SK8 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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HUF75831SK8 Datasheet PDF : 11 Pages
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HUF75831SK8
Typical Performance Curves (Continued)
100
RθJA = 50oC/W
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
SINGLE PULSE
TJ = MAX RATED
0.1
TA = 25oC
1
10
100
1ms
10ms
500
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
100
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R ≠0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
10
STARTING TJ = 150oC
STARTING TJ = 25oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDD = 15V
15
10
5
TJ = 150oC
TJ = -55oC
TJ = 25oC
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
20
VGS = 20V
VGS = 10V
15
VGS =5V
VGS = 7V
10
VGS = 6V
5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TA = 25oC
0
0
0.5
1.0
1.5
2.0
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 8. SATURATION CHARACTERISTICS
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
VGS = 10V, ID = 3A
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
©2001 Fairchild Semiconductor Corporation
1.2
VGS = VDS, ID = 250µA
1.1
1.0
0.9
0.8
0.7
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
HUF75831SK8 Rev. B
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