DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HM-6617 Ver la hoja de datos (PDF) - Intersil

Número de pieza
componentes Descripción
Fabricante
HM-6617
Intersil
Intersil Intersil
HM-6617 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
HM-6617
March 1997
2K x 8 CMOS PROM
Features
Description
• Low Power Standby and Operating Power
- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA
- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns
• Industry Standard Pinout
• Single 5.0V Supply
• CMOS/TTL Compatible Inputs
• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads
• Synchronous Operation
• On-Chip Address Latches
• Separate Output Enable
The HM-6617 is a 16,384 bit fuse link CMOS PROM in a 2K
word by 8-bit/word format with “Three-State” outputs. This
PROM is available in the standard 0.600 inch wide 24 pin
SBDIP, the 0.300 inch wide slimline SBDIP, and the JEDEC
standard 32 pad CLCC.
The HM-6617 utilizes a synchronous design technique. This
includes on-chip address latches and a separate output
enable control which makes this device ideal for applications
utilizing recent generation microprocessors. This design
technique, combined with the Intersil advanced self-aligned
silicon gate CMOS process technology offers ultra-low
standby current. Low ICCSB is ideal for battery applications
or other systems with low power requirements.
Ordering Information
PKG.
PACKAGE TEMP. RANGE 90ns
120ns
NO.
SBDIP
-40oC to +85oC HM1-
HM1-
D24.6
6617B-9 6617-9
SMD# -55oC to +125oC 5962-
5962-
D24.6
8954002JA 8954001JA
SLIM
-40oC to +85oC HM6-
HM6-
D24.3
SBDIP
6617B-9 6617-9
SMD# -55oC to +125oC 5962-
5962-
D24.3
8954002LA 8954001LA
CLCC
-40oC to +85oC HM4-
HM4-
J32.A
6617B-9 6617-9
SMD# -55oC to +125oC 5962-
5962-
J32.A
8954002XA 8954001XA
The Intersil NiCr fuse link technology is utilized on this and
other Intersil CMOS PROMs. This gives the user a PROM
with permanent, stable storage characteristics over the full
industrial and military temperature voltage ranges. NiCr fuse
technology combined with the low power characteristics of
CMOS provides an excellent alternative to standard bipolar
PROMs or NMOS EPROMs.
All bits are manufactured storing a logical “0” and can be
selectively programmed for a logical “1” at any bit location.
Pinouts
HM-6617 (SBDIP)
TOP VIEW
A7 1
A6 2
A5 3
A4 4
A3 5
A2 6
A1 7
A0 8
Q0 9
Q1 10
Q2 11
GND 12
24 VCC
23 A8
22 A9
21 P
20 G
19 A10
18 E
17 Q7
16 Q6
15 Q5
14 Q4
13 Q3
HM-6617 (CLCC)
TOP VIEW
4 3 2 1 32 31 30
A6 5
29 A8
A5 6
28 A9
A4 7
27 NC
A3 8
26 P
A2 9
25 G
A1 10
24 A10
A0 11
23 E
NC 12
22 Q7
Q0 13
21 Q6
14 15 16 17 18 19 20
PIN DESCRIPTION
PIN
NC
A0-A10
E
Q
VCC
G
DESCRIPTION
No Connect
Address Inputs
Chip Enable
Data Output
Power (+5V)
Output Enable
P (Note) Output Enable
NOTE: P should be hardwired to VCC
except during programming.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
6-1
File Number 3017.1

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]