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24501BVA Datasheet PDF : 8 Pages
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HM-6504
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . GND -0.3V to VCC +0.3V
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Thermal Information
Thermal Resistance (Typical)
θJA
CERDIP Package . . . . . . . . . . . . . . . . 75oC/W
θJC
15oC/W
PDIP Package . . . . . . . . . . . . . . . . . . . 75oC/W
N/A
CLCC Package . . . . . . . . . . . . . . . . . . 90oC/W
33oC/W
Maximum Storage Temperature Range . . . . . . . . .-65oC to +150oC
Maximum Junction Temperature
Ceramic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC
Plastic Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . +300oC
Die Characteristics
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6910 Gates
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Voltage Range . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Operating Temperature Range
HM-6504S-9, HM-6504B-9, HM-6504-9 . . . . . . . .-40oC to +85oC
HM-6504B-8, HM-6504-8 . . . . . . . . . . . . . . . . . .-55oC to +125oC
DC Electrical Specifications VCC = 5V ±10%; TA = -40oC to +85oC (HM-6504B-9, HM-6504-9)
TA = -55oC to +125oC (HM-6504B-8, HM-6504-8)
SYMBOL
PARAMETER
MIN
MAX
UNITS
TEST CONDITIONS
ICCSB
Standby Supply Current HM-6504-9
-
HM-6504-8
-
25
µA
IO = 0mA, E = VCC -0.3V,
VCC = 5.5V
50
µA
ICCOP
Operating Supply
-
Current (Note 1)
ICCDR
Data Retention Supply
HM-6504-9
-
Current
HM-6504-8
-
7
mA E = 1MHz, IO = 0mA, VI = GND,
VCC = 5.5V
15
µA
IO = 0mA, VCC = 2.0V, E = VCC
25
µA
VCCDR Data Retention Supply Voltage
2.0
-
V
II
IOZ
VIL
VIH
VOL
VOH1
VOH2
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output High Voltage (Note 2)
-1.0
+1.0
µA
VI = VCC or GND, VCC = 5.5V
-1.0
+1.0
µA
VO = VCC or GND, VCC = 5.5V
-0.3
0.8
V
VCC = 4.5V
VCC -2.0 VCC +0.3
V
VCC = 5.5V
-
0.4
V
IO = 2.0mA, VCC = 4.5V
2.4
-
V
IO = -1.0mA, VCC = 4.5V
VCC -0.4
-
V
IO = -100µA, VCC = 4.5V
Capacitance TA = +25oC
SYMBOL
PARAMETER
CI
Input Capacitance (Note 2)
CO
Output Capacitance (Note 2)
NOTES:
1. Typical derating 5mA/MHz increase in ICCOP.
2. Tested at initial design and after major design changes.
MAX
8
10
UNITS
pF
pF
TEST CONDITIONS
f = 1MHz, All measurements are
referenced to device GND
6-128
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