G5N120CN Ver la hoja de datos (PDF) - Fairchild Semiconductor
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G5N120CN Datasheet PDF : 7 Pages
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HGTP5N120CN, HGT1S5N120CNS
Typical Performance Curves Unless Otherwise Specified (Continued)
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
TJ = 25oC, TJ = 150oC, VGE = 15V
15
2
3
4
5
6
7
8
9
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
40
RG = 25Ω, L = 5mH, VCE = 960V
35
30
TJ = 25oC, TJ = 150oC, VGE = 12V
25
20
15
10
TJ = 25oC, TJ = 150oC, VGE = 15V
0
2
3
4
5
6
7
8
9
10
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
600
RG = 25Ω, L = 5mH, VCE = 960V
500
400
TJ = 150oC, VGE = 12V, VGE = 15V
300
200
100
TJ = 25oC, VGE = 12V, VGE = 15V
0
1
2
3
4
5
6
7
8
9 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
900
RG = 25Ω, L = 5mH, VCE = 960V
800
700
600
500
TJ = 150oC, VGE = 12V AND 15V
400
300
TJ = 25oC, VGE = 12V AND 15V
200
100
1
2
3
4
5
6
7
8
9 10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
100
DUTY CYCLE < 0.5%, VCE = 20V
90 250µs PULSE TEST
80
TC = 25oC
70
TC = -55oC
60
50
40
TC = 150oC
30
20
10
0
6 7 8 9 10 11 12 13 14 15 16
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
©2001 Fairchild Semiconductor Corporation
16
14
12
10
8
6
4
2
0
0
VCE = 1200V
VCE = 400V
VCE = 800V
IG(REF) = 1mA, RL = 120Ω, TC = 25oC
10
20
30
40
50
60
QG , GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTP5N120CN, HGT1S5N120CNS Rev. B
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