HAL710SF-K Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
HAL710SF-K Datasheet PDF : 12 Pages
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ADVANCE INFORMATION
HAL710
3.6. Electrical Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V, as not otherwise specified in Conditions.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
IDD
IDD
VDDZ
VOZ
VOL
VOL
IOH
IOH
fosc
fosc
ten(O)
tr
tf
RthSB
SOT-89B
Parameter
Supply Current
Supply Current
over Temperature Range
Overvoltage Protection
at Supply
Overvoltage Protection
at Output
Output Voltage
Output Voltage over
Temperature Range
Output Leakage Current
Pin No.
1
1
Min.
2
1
2,3
2,3
2,3
2,3
Output Leakage Current over
2,3
Temperature Range
Internal sampling frequency
−
130
Internal sampling frequency
−
100
over Temperature Range
Enable Time of Output after
Setting of VDD
Output Rise Time
2,3
Output FallTime
2,3
Thermal Resistance Junction to −
−
Substrate Backside
Typ.
5.5
7
28.5
28
130
130
0.06
−
150
150
50
1.2
0.2
150
Max. Unit
9
mA
10
mA
32
V
32
V
280
mV
400
mV
0.1
µA
10
µA
−
kHz
−
kHz
100
µs
µs
1.6
µs
200
K/W
Conditions
TJ = 25 °C
IDD = 25 mA, TJ = 25 °C, t = 20 ms
IOH = 25 mA, TJ = 25 °C, t = 20 ms
IOL = 10 mA, TJ = 25 °C
IOL = 10 mA,
Output switched off, TJ = 25 °C,
VOH = 3.8 V to 24 V
Output switched off, TJ ≤ 140 °C,
VOH = 3.8 V to 24 V
TJ = 25 °C
VDD = 12 V,
B>Bon + 2 mT or B<Boff − 2 mT
VDD = 12 V, RL= 20 kΩ, CL= 20 pF
VDD = 12 V, RL= 20 kΩ, CL= 20 pF
Fiberglass Substrate
30 mm x 10mm x 1.5mm,
pad size see Fig. 3–2
5.0
2.0
2.0
1.0
Fig. 3–2: Recommended pad size for SOT-89B
Dimensions in mm
Micronas
9
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