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HAL710SF-K

Hall-Effect Sensor with Direction Detection

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ADVANCE INFORMATION

HAL710

Hall-Effect Sensor with Direction Detection

1. Introduction

The HAL 710 is a monolithic integrated Hall-effect sen-

sor manufactured in CMOS technology with two inde-

pendent Hall plates S1 and S2 spaced 2.35 mm apart.

The device has two open-drain outputs:

The ’Count Output’ operates like a single latched Hall

switch according to the magnetic field present at Hall

plate S1 (see Fig. 3–3).

The ‘Direction Output’ indicates the direction of a linear

or rotating movement of magnetic objects.

In combination with an active target providing a

sequence of alternating magnetic north and south

poles, the sensor forms a system generating the sig-

nals required to control position, speed, and direction

of the target movement.

The internal circuitry evaluates the direction of the

movement and updates the ‘Direction Output’ at every

edge of the ‘Count Signal’ (rising and falling). The

Direction Output is high if the target moves from Hall

plate S1 to Hall plate S2. It is low if the target first

passes plate S2 and later plate S1. The state of the

Direction Output only changes at a rising or falling

edge of the Count Output.

The design ensures a setup time for the Direction Out-

put with respect to the corresponding Count Signal

edge of 1/2 clock periods (1 µs minimum).

The device includes temperature compensation and

active offset compensation. These features provide

excellent stability and matching of the switching points

in the presence of mechanical stress over the whole

temperature and supply voltage range. This is required

by systems determining the direction from the compar-

ison of two transducer signals.

The sensor is designed for industrial and automotive

applications and operates with supply voltages from

3.8 V to 24 V in the ambient temperature range from

−40 °C up to 125 °C.

The HAL 710 is available in the SMD package

SOT-89B.

1.1. Features

– generation of ‘Count Signals’ and ‘Direction Signals’

– delay of the ‘Count Signals’ with respect to the

‘Direction Signal’ of 1 µs minimum

– switching type latching

– low sensitivity

– typical BON: 14.9 mT at room temperature

– typical BOFF: −14.9 mT at room temperature

– temperature coefficient of −2000 ppm/K in all mag-

netic characteristics

– switching offset compensation at typically 150 kHz

– operation from 3.8 V to 24 V supply voltage

– operation with static magnetic fields and dynamic

magnetic fields up to 10 kHz

– overvoltage protection at all pins

– reverse-voltage protection at VDD-pin

– robustness of magnetic characteristics against

mechanical stress

– short-circuit protected open-drain outputs by ther-

mal shut down

– constant switching points over a wide supply voltage

range

– EMC corresponding to DIN 40839

1.2. Applications

The HAL 710 is the optimal sensor for position-control

applications with direction detection and alternating

magnetic signals such as:

– multipole magnet applications,

– rotating speed and direction measurement,

position tracking (active targets), and

– window lifters.

Micronas

3

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