STD100GK12 Ver la hoja de datos (PDF) - Sirectifier Electronics

Número de pieza

componentes Descripción

Fabricante

STD100GK12

Thyristor-Diode Modules, Diode-Thyristor Modules

Sirectifier Electronics 

STD/SDT100

Thyristor-Diode Modules, Diode-Thyristor Modules

Fig. 1 Surge overload current

ITSM, IFSM: Crest value, t: duration

Fig. 2 i2dt versus time (1-10 ms)

Fig. 2a Maximum forward current

at case temperature

10

V

VG

1: IGT, TVJ = 125oC

2: IGT, TVJ = 25oC

3: IGT, TVJ = -40oC

Fig. 3 Power dissipation versus on-state current and ambient temperature

(per thyristor or diode)

3

1

2

56

1

4

IGD, TVJ = 125oC

0.1

100

101

102

4: PGAV = 0.5 W

5: PGM = 5 W

6: PGM = 10 W

103 mA 104

IG

Fig. 4 Gate trigger characteristics

1000

TVJ = 25oC

s

tgd

100

typ.

Limit

10

3 x STD/SDT100

Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current

and ambient temperature

3 x STD/SDT100

1

10

100

IG

Fig. 6 Gate trigger delay time

mA 1000

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