XP133A0245SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR

Número de pieza

componentes Descripción

Fabricante

XP133A0245SR

Power MOS FET

TOREX SEMICONDUCTOR 

XP133A0245SR

■Typical Performance Characteristics

DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE

15

5V

2.5V

Pulse Test, Ta=25°C

2V

3V

10

4V

DRAIN CURRENT vs. GATE-SOURCE VOLTAGE

Pulse Test, Vds=10V

15

10

1.5V

Topr＝25℃

5

5

Vgs＝1V

0

0

1

2

3

Drain-Source Voltage:Vds (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. GATE-SOURCE VOLTAGE

Pulse Test, Ta=25°C

0.15

125℃

-55℃

0

0

1

2

3

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. DRAIN CURRENT

Pulse Test, Ta=25°C

1

0.1

5A

Id＝3A

0.05

0

0

2

4

6

8

10

Gate-Source Voltage:Vgs (V)

DRAIN-SOURCE ON-STATE RESISTANCE

vs. AMBIENT TEMPERATURE

Pulse Test

0.15

Id＝3A

0.1

Vgs＝1.5V

2.5V

0.05

1A

5A

3A

4.5V

3A,5A

0

-60 -30

0

30 60 90 120 150

Ambient Temp.:Topr (°C)

Vgs＝1.5V

0.1

2.5V

4.5V

0.01

0

5

10

15

Drain Current:Id (A)

GATE-SOURCE CUT-OFF VOLTAGE VARIANCE

vs. AMBIENT TEMPERATURE

11

Vds=10V, Id=1mA

0.6

0.4

0.2

0.0

-0.2

-0.4

-0.6

-60 -30 0

30 60 90 120 150

Ambient Temp.:Topr (°C)

777

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