XP133A0245SR Ver la hoja de datos (PDF) - TOREX SEMICONDUCTOR
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XP133A0245SR Datasheet PDF : 4 Pages
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Power MOS FET
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.045Ω (max)
NUltra High-Speed Switching
NSOP-8 Package
NTwo FET Devices Built-in
■General Description
The XP133A0245SR is an N-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Two FET devices are built into the one package.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOP-8 package makes high density mounting possible.
■Applications
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
■Features
Low on-state resistance : Rds(on)=0.045Ω (Vgs=4.5V)
: Rds(on)=0.060Ω (Vgs=2.5V)
: Rds(on)=0.1Ω (Vgs=1.5V)
Ultra high-speed switching
Operational Voltage : 1.5V
High density mounting : SOP-8
■Pin Configuration
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
SOP-8
(TOP VIEW)
■Equivalent Circuit
1
8
2
7
3
6
4
5
N-Channel MOS FET
(2 devices built-in)
■Pin Assignment
PIN
NUMBER
1
2
3
4
5~6
7~8
PIN
NAME
S1
G1
S2
G2
D2
D1
FUNCTION
Source
Gate
Source
Gate
Drain
Drain
■Absolute Maximum Ratings
Ta=25°C
PARAMETER
SYMBOL RATINGS UNITS
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Vdss
Vgss
Id
Idp
Idr
20
V
±8
V
5
A
15
A
5
A
Continuous Channel
Power Dissipation (note)
Pd
2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55~150 °C
Note: When implemented on a glass epoxy PCB
11
775
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