DTA144TE Ver la hoja de datos (PDF) - ROHM Semiconductor
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componentes Descripción
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DTA144TE Datasheet PDF : 2 Pages
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Transistors
DTA144TM / DTA144TH / DTA144TE / DTA144TUA
DTA144TKA / DTA144TSA
!Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
M
Limits(DTA144T )
Unit
H
E
UA KA SA
Collector-base voltage
VCBO
−50
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−5
Collector current
IC
−100
mA
Collector power dissipation Pc
150
200
300 mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
∗ Transition frequency of the device
Symbol Min. Typ. Max. Unit
Conditions
BVCBO −50
−
−
V IC=−50µA
BVCEO −50
−
−
V IC=−1mA
BVEBO
−5
−
−
V IE=−50µA
ICBO
−
−
−0.5 µA VCB=−50V
IEBO
−
−
−0.5 µA VEB=−4V
VCE(sat)
−
− −0.3 V IC/IB=−5mA/−0.5mA
hFE
100 250 600
− VCE=−5V, IC=−1mA
R1
32.9 47 61.1 kΩ
−
fT
−
250
− MHz VCE=−10V, IE=5mA, f=100MHz ∗
!Packaging specifications
Package
Packaging type
Code
Type
Basic ordering
unit (pieces)
DTA144TM
DTA144TH
DTA144TE
DTA144TUA
DTA144TKA
DTA144TSA
VMT3
Taping
T2L
EMT3 Flat lead
Taping
T2L
EMT3
Taping
TL
UMT3
Taping
T106
SMT3
Taping
T146
SPT
Taping
TP
8000
8000
3000
3000
3000
5000
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
!Electrical characteristic curves
1k
VCE=−5V
500
200
100
Ta=100°C
25°C
50
−40°C
20
10
5
2
1
−100µ−200µ −500µ −1m −2m −5m −10m −20m −50m−100m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.collector
current
−1
lC/lB=10
−500m
Ta=100°C
−200m
25°C
−100m
−40°C
−50m
−20m
−10m
−5m
−2m
−1m
−10µ −20µ −50µ −100µ −200µ −500µ−1m −2m −5m −10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-emitter saturation
voltage vs.collector current
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