KSC5367 Ver la hoja de datos (PDF) - Inchange Semiconductor
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KSC5367 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5367
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB=B 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VCE(sat)-3 Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IC= 0.25A; IB= 25mA
IC= 0.5A; IB= 50mA
IC= 1A; IB=B 0.2A
IC= 3A; IB=B 0.6A
VCB= 1600V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 12V; IC=0
hFE-1
DC Current Gain
IC= 0.4A; VCE= 3V
hFE-2
DC Current Gain
IC= 5mA; VCE= 10V
COB
Output Capacitance
Switching Times
IE= 0; VCB= 10V; ftest= 1MHz
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
ton
Turn-On Time
ts
Storage Time
tf
Fall Time
IC= 0.5A; IB1= 42mA;
IB2= -333mA;VCC= 125V
IC= 1A; IB1= 0.2A;
IB2= -0.4A;VCC= 250V
MIN TYP. MAX UNIT
1600
V
800
V
12
V
2.5
V
4.5
V
2.5
V
1.5
V
20 μA
20 μA
12
35
8
40
pF
0.5 μs
2.2 μs
0.5 μs
0.5 μs
4.0 μs
0.5 μs
isc Website：www.iscsemi.cn
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