KSC5367 Ver la hoja de datos (PDF) - Inchange Semiconductor
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KSC5367 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KSC5367
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1600
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
12
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
6
A
IBB
Base Current-Continuous
2
A
IBM
Base Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
4
A
80
W
150
℃
-65~150 ℃
isc Website：www.iscsemi.cn
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