BAV99W Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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BAV99W Datasheet PDF : 4 Pages
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BAV99W
SOT-323 Plastic-Encapsulate Diodes
Switching Diodes
Features
● For high-speed switching applications
● Connected in series
SOT- 3 23
3
Marking
●K J G
2
1
Parameter
Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current @t=8.3ms
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
Limit
VR
75
IF
IFSM
2.0
PD
RθJA
625
TJ
150
TSTG
-55~+150
Unit
V
mA
A
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test conditions
Reverse breakdown voltage
V(BR)
IR= 1μA
Reverse voltage leakage current
IR1
VR=75V
IR2
VR=25V
Forward voltage
Diode capacitance
Reverse recovery time
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
CD
VR=0 f=1MHz
t rr
IF=IR=10mA
Irr=0.1×IR,RL=100Ω
Min
Max
5
2.5
25
715
855
1000
1250
4
High Diode Semiconductor
Unit
V
μA
nA
mV
pF
ns
1
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