TN3440A Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
TN3440A Datasheet PDF : 8 Pages
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Electrical Characteristics
Symbol
Parameter
NPN General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
VCEO(sus)
V(BR)CBO
Collector-Emitter Sustaining Voltage*
Collector-Base Breakdown Voltage
ICEO
Collector-Cutoff Current
ICEX
Collector-Cutoff Current
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 50 mA, IB = 0
IC = 100 µA, IE = 0
VCE = 200 V, IB = 0
VCE = 300 V, VBE = 1.5 V
VCB = 250 V, IE = 0
VEB = 5.0 V, IC = 0
250
V
300
V
50
µA
500
µA
20
µA
20
µA
ON CHARACTERISTICS
hFE
DC Current Gain
VCE(sat)
VBE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC = 2.0 mA, VCE = 10 V
IC = 20 mA, VCE = 10 V
IC = 50 mA, IB = 4.0 mA
IC = 50 mA, IB = 4.0 mA
30
40
160
0.5
V
1.3
V
SMALL SIGNAL CHARACTERISTICS
fT
Cobo
Cibo
hfe
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 10 V,
15
f = 5.0 MHz
Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
Input Capacitance
VBE = 5.0 V, IC = 0, f = 1.0 MHz
Small-Signal Current Gain
IC = 5.0 mA, VCE = 10 V,
25
f = 1.0 kHz
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%
MHz
10
pF
95
pF
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
1 0 00
25 °C
1 00
125 °C
V CE = 5V
- 40 °C
10
1
0. 0 01
0.01
0.1
1
I C - COLLECTOR CURRENT (A)
Collector-Emitter Saturation
Voltage vs Collector Current
0.3
β = 10
125 °C
0.2
25 °C
0.1
- 40 °C
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
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