TN3019A Ver la hoja de datos (PDF) - Fairchild Semiconductor

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TN3019A

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage* IC = 30 mA, IB = 0

80

V(BR)CBO

Collector-Base Breakdown Voltage

IC = 100 µA, IE = 0

140

V(BR)EBO

Emitter-Base Breakdown Voltage

IE = 100 µA, IC = 0

7.0

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

VCB = 90 V, IE = 0

VCB = 90 V, IE = 0, TA = 150°C

VEB = 5.0 V, IC = 0

ON CHARACTERISTICS

hFE

VCE(sat)

VBE(sat)

DC Current Gain

IC = 0.1 mA, VCE = 10 V

50

IC = 10 mA, VCE = 10 V

90

IC = 150 mA, VCE = 10 V

100

IC=150 mA,VCE=10 V,TA=-55°C

40

IC = 500 mA, VCE = 10 V*

50

IC = 1.0 A, VCE = 10 V*

15

Collector-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA

Base-Emitter Saturation Voltage

IC = 10 mA, IB = 15 mA

SMALL SIGNAL CHARACTERISTICS

fT

Cobo

Current Gain - Bandwidth Product

IC = 50 mA, VCE = 10 V,

100

f = 20 MHz

Output Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

Cibo

Input Capacitance

VBE = 0.5 V, IC = 0, f = 1.0 MHz

hfe

Small-Signal Current Gain

IC = 1.0 mA, VCE = 5.0 V,

80

f = 1.0 kHz

rb’Cc

Collector Base Time Constant

IE = 10 mA, VCB = 10 V,

f = 4.0 MHz

NF

Noise Figure

IC = 100 mA, VCE = 10 V,

RS = 1.0 kΩ, f = 1.0 kHz

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

0.01

10

0.01

300

0.2

0.5

1.1

12

60

400

400

4.0

V

V

V

µA

µA

µA

V

V

V

MHz

pF

pF

pS

dB

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