TN2510ND Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
TN2510ND Datasheet PDF : 4 Pages
| |||
Thermal Characteristics
TN2510
Package
TO-243AA
ID (continuous)*
0.73A
ID (pulsed)
5.0A
Power Dissipation
@ TA = 25°C
1.6W†
θjc
°C/W
15
θja
°C/W
78†
*
†
ID (continuous) is
Mounted on FR5
limited
board,
by max
25mm x
rated Tj.
25mm x
1.57mm.
Significant
PD
increase
possible
on
ceramic
substrate.
Electrical Characteristics (@ 25°C unless otherwise specified)
IDR*
0.73A
IDRM
5.0A
Symbol
BVDSS
Parameter
Drain-to-Source
Breakdown Voltage
Min Typ Max Unit
100
V
Conditions
VGS = 0V, ID = 2mA
VGS(th)
Gate Threshold Voltage
0.6
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
2.0
V
-4.5 mV/°C
100
nA
10
µA
1.0
mA
ID(ON)
ON-State Drain Current
1.2
2.0
3.0
6.0
RDS(ON)
Static Drain-to-Source
ON-State Resistance
15
1.5
2.0
1.0
1.5
∆RDS(ON)
Change in RDS(ON) with Temperature
0.75
GFS
Forward Transconductance
0.4
0.8
CISS
Input Capacitance
70 125
COSS
Common Source Output Capacitance
30
70
CRSS
Reverse Transfer Capacitance
15
25
td(ON)
Turn-ON Delay Time
10
tr
Rise Time
10
td(OFF)
Turn-OFF Delay Time
20
tf
Fall Time
10
VSD
Diode Forward Voltage Drop
1.8
trr
Reverse Recovery Time
300
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
A
Ω
%/°C
pF
ns
V
ns
VGS = VDS, ID= 1mA
VGS = VDS, ID= 1.0mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 0V, VDS = 0.8 Max Rating
TA = 125°C
VGS = 5.0V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 3.0V, ID = 250mA
VGS = 4.5V, ID = 750mA
VGS = 10V, ID = 750mA
VGS = 10V, ID = 750mA
VDS = 25V, ID = 1.0A
VGS = 0V, VDS = 25V
f = 1 MHz
VDD = 25V,
ID = 1.5A,
RGEN = 25Ω
VGS = 0V, ISD = 1.5A
VGS = 0V, ISD = 1.5A
Switching Waveforms and Test Circuit
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
VDD
RL
OUTPUT
D.U.T.
Share Link: 