TN2535 Ver la hoja de datos (PDF) - Supertex Inc
Número de pieza
componentes Descripción
Fabricante
TN2535 Datasheet PDF : 4 Pages
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Thermal Characteristics
Package
TO-243AA
ID (continuous)*
283mA
ID (pulsed)
1.6A
Power Dissipation
@ TA = 25°C
1.6W†
θjc
°C/W
15
* ID (continuous) is limited by max rated Tj.
† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate.
θja
°C/W
78†
IDR*
283mA
TN2535
IDRM
1.6A
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol
Parameter
Min Typ Max Unit
BVDSS
350
VGS(th)
Gate Threshold Voltage
1.0
∆VGS(th)
Change in VGS(th) with Temperature
IGSS
Gate Body Leakage
IDSS
Zero Gate Voltage Drain Current
ID(ON)
ON-State Drain Current
0.5
1.0
V
2.0
V
-4.0 mV/°C
100
nA
1.0
µA
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
15
10
Ω
10
∆RDS(ON)
GFS
CISS
COSS
CRSS
td(ON)
tr
td(OFF)
tf
VSD
trr
Change in RDS(ON) with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
0.75 %/°C
125
m
125
70
pF
25
20
15
25
ns
20
1.8
V
300
ns
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Conditions
VGS = 0V, ID = 250µA
VGS = VDS, ID= 1mA
VGS = VDS, ID= 1mA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
VGS = 4.5V, VDS = 25V
VGS = 10V, VDS = 25V
VGS = 3.0V, ID = 20mA
VGS = 4.5V, ID = 100mA
VGS = 10V, ID = 200mA
VGS = 10V, ID = 200mA
VDS = 25V, ID = 100mA
VDD = 25V,
ID = 200mA,
RGEN = 25Ω
VGS = 0V, ISD = 200mA
VGS = 0V, ISD = 200mA
Switching Waveforms and Test Circuit
VDD
10V
INPUT
0V
10%
VDD
OUTPUT
0V
t(ON)
td(ON)
tr
10%
90%
90%
t(OFF)
td(OFF)
tF
10%
90%
2
PULSE
GENERATOR
Rgen
INPUT
RL
OUTPUT
D.U.T.
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