LBE2003S Ver la hoja de datos (PDF) - Philips Electronics
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Fabricante
LBE2003S Datasheet PDF : 16 Pages
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Philips Semiconductors
NPN microwave power transistors
Product specification
LBE2003S; LBE2009S;
LCE2009S
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
collector cut-off current
VCB = 20 V; IE = 0
−
ICBO
collector cut-off current
VCB = 40 V; IE = 0
LBE2003S
−
LBE2009S; LCE2009S
−
ICER
collector cut-off current
LBE2003S
VCB = 35 V; RBE = 220 Ω −
LBE2009S; LCE2009S
VCB = 35 V; RBE = 100 Ω −
IEBO
emitter cut-off current
LBE2003S
VEB = 1.5 V; IC = 0
−
LBE2009S; LCE2009S
−
hFE
DC current gain
VCE = 5 V; IC = 30 mA 15
VCE = 5 V; IC = 110 mA 15
Ccb
collector-base capacitance VCB = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
LBE2009S; LCE2009S
−
Cce
collector-emitter capacitance VCE = 18 V; VEB = 1.5 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
LBE2009S; LCE2009S
−
Ceb
emitter-base capacitance
VCB = 10 V; VEB = 1 V;
IE = IC = 0; f = 1 MHz
LBE2003S
−
LBE2009S; LCE2009S
−
TYP.
−
−
−
−
−
−
−
−
−
0.3
0.6
0.45
0.6
1.7
3.3
MAX.
0.1
150
250
500
1000
0.05
0.2
150
150
−
−
−
−
−
−
UNIT
µA
µA
µA
µA
µA
µA
µA
pF
pF
pF
pF
pF
pF
LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15
1997 Mar 03
5
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