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LBE2003S

NPN microwave power transistors

Philips Electronics 

Philips Semiconductors

NPN microwave power transistors

Product specification

LBE2003S; LBE2009S;

LCE2009S

103

handbook, halfpage

IC

(mA)

(3)

102

(1)

(2)

10

MGD990

4

handbook, halfpage

P tot

(W)

3

2

1

MGD991

1

10

20

40

VCE (V) 102

Tmb ≤ 75 °C.

(1) Region of permissible DC operation.

(2) Permissible extension provided RBE ≤ 100 Ω.

(3) Second breakdown limit (independant of temperature).

Fig.5 DC SOAR; LBE2009S, LCE2009S

0

−50

0

50

100

150

200

Tmb (oC)

Fig.6 Power dissipation derating as a function

of mounting-base temperature;

LBE2009S, LCE2009S.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-mb

Rth mb-h

thermal resistance from junction to mounting-base

LBE2003S

LBE2009S; LCE2009S

thermal resistance from mounting-base to heatsink

Tj = 75 °C; note 1

Tj = 75 °C; note 1

Note

1. See “Mounting recommendations in the General part of handbook SC15”.

MAX. UNIT

65 K/W

36 K/W

1.5 K/W

LCE2009S IS A MAINTENANCE TYPE - NOT RECOMMENDED FOR NEW DESIGNS; SEE INDEX SECTION OF SC15

1997 Mar 03

4

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