1N4448W-V(2005) Ver la hoja de datos (PDF) - Vishay Semiconductors
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1N4448W-V Datasheet PDF : 6 Pages
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1N4448W-V
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Test condition
Symbol
Value
Unit
RthJA
3501)
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 5 mA
IF = 100 mA
Leakage current
VR = 20 V
VR = 75 V
VR = 20 V, TJ = 150 °C
Capacitance
VF = VR = 0 V
Reverse recovery time
IF = 10 mA to IR = 10 mA,
VR = 6 V, RL = 100 Ω
Rectification efficiency
f = 100 MHz, VRF = 2 V
Rectification Efficieny Measurement
Circuit
Symbol
Min
Typ.
Max
Unit
VF
0.62
0.72
V
VF
1
V
IR
25
nA
IR
5
µA
IR
50
µA
4
pF
trr
4
ns
ην
0.45
60 Ω
17436
VRF = 2 V
2 nF
5 kΩ
VO
www.vishay.com
2
Document Number 85722
Rev. 1.3, 12-Dec-05
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